材料科学
硅
外延
沉积(地质)
化学气相沉积
薄脆饼
基质(水族馆)
多晶硅
光电子学
纳米技术
化学工程
图层(电子)
薄膜晶体管
古生物学
工程类
地质学
海洋学
生物
沉积物
作者
Chunyan Duan,Bin Ai,Jian Jun Lai,Chao Liu,Yuanyuan Deng,Hui Shen
出处
期刊:Advanced Materials Research
日期:2011-07-01
卷期号:295-297: 1211-1216
标识
DOI:10.4028/www.scientific.net/amr.295-297.1211
摘要
We have investigated the deposition of silicon films on SiO 2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO 2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO 2 layers of the pretreated substrates.
科研通智能强力驱动
Strongly Powered by AbleSci AI