极紫外光刻
铜互连
多重图案
背景(考古学)
生产线后端
材料科学
薄脆饼
过程(计算)
光电子学
计算机科学
纳米技术
抵抗
古生物学
电介质
操作系统
生物
图层(电子)
作者
Yannick Hermans,Chen Wu,Nunzio Buccheri,Filip Schleicher,Janko Versluijs,D. Montero,Bappaditya Dey,Patrick Wong,Paulina A. Rincon-Delgadillo,Seong-Ho Park,Zsolt Tökei,Philippe Leray,Sandip Halder
摘要
193i SAQP has allowed industry for continued BEOL metal pitch scaling, but as metal pitches become even tighter EUV SADP becomes an interesting alternative. In this context we have explored within our dual damascene 3ML test vehicles how the EUV SADP process compares to 193i SAQP for printing MP21 M2 lines. Our first EUV SADP results already show a better wafer CDU compared to our POR 193i SAQP process.
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