空位缺陷
材料科学
热电效应
兴奋剂
塞贝克系数
电荷(物理)
载流子
凝聚态物理
费米能级
相(物质)
相变存储器
相变
纳米技术
光电子学
热力学
物理
量子力学
图层(电子)
电子
作者
Lei Gao,Wenhao Li,Sitong Wei,Xinyue Yang,Zhen Ji,Wenli Song,Shuqi Zheng
标识
DOI:10.1002/pssb.202200507
摘要
As a derivative of GeTe and MnTe, GeMnTe 2 exhibits a cubic structure with no phase transition. Compared to GeTe, it is considerably cheaper and has a significantly high carrier concentration compared to MnTe, making it an excellent thermoelectric (TE) material with promising applications. Herein, a charge‐balanced vacancy engineering strategy is employed, resulting in a significant improvement in the power factor of GeMnTe 2 . Furthermore, the density functional theory calculation shows that the doping of Bi and the absence of Ge synergically increase the density of states near the Fermi level. Power factors of ≈13.7 μW cm −1 K −2 are achieved at 8% Bi content, a 22% improvement compared to the undoped system, while a final maximum ZT value of about 1.12 and an average ZT value of 0.72 are achieved. This indicates that charge‐balance vacancy engineering is an effective optimization method for the GeMnTe 2 system, which can effectively improve the TE performance.
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