2D WS2 monolayer preparation method and research progress in the field of optoelectronics

Abstract Two-dimensional Transition Metal Dichalcogenides (2D TMDs) have garnered significant attention in the field of materials science due to their remarkable electronic and optoelectronic properties, including high carrier mobility and tunable band gaps. Despite the extensive research on various TMDs, there remains a notable gap in understanding the synthesis techniques and their implications for the practical application of monolayer tungsten disulfide (WS2) in optoelectronic devices. This gap is critical, as the successful integration of WS2 into commercial technologies hinges on the development of reliable synthesis methods that ensure high quality and uniformity of the material. In this study, we present a comprehensive overview of the synthesis techniques for monolayer WS2, focusing on mechanical stripping, Atomic Layer Deposition (ALD), and Chemical Vapor Deposition (CVD). We highlight the advantages of each method, such as the uniform growth achievable with ALD at low temperatures and the capability of CVD to produce large-area, high-quality monolayers. Additionally, we summarize the performance of WS2 in various electronic and optoelectronic applications, including field-effect transistors (FETs), photodetectors, and logic devices. Our findings indicate that with ongoing advancements in film uniformity, compatibility with existing semiconductor processes, and the long-term stability of WS2-based devices, there is a promising trajectory for the transition of 2D WS2 from laboratory research to practical applications. This work not only addresses the existing gaps in the literature but also underscores the potential of WS2 to significantly impact the future of optoelectronic technologies.