石墨烯
材料科学
纳米技术
氧化物
数码产品
双极扩散
单层
氧化石墨烯纸
石墨
半导体
光电子学
碳纳米管
纳米线
晶体管
复合材料
电气工程
电子
物理
工程类
电压
量子力学
冶金
作者
Goki Eda,Giovanni Fanchini,Manish Chhowalla
标识
DOI:10.1038/nnano.2008.83
摘要
The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
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