电阻随机存取存储器
材料科学
神经形态工程学
横杆开关
光电子学
非易失性存储器
堆栈(抽象数据类型)
电阻器
记忆电阻器
电阻式触摸屏
电压
电气工程
计算机科学
工程类
机器学习
人工神经网络
程序设计语言
作者
Youngboo Cho,J. E. Heo,Sung-Joon Kim,Sungjun Kim
标识
DOI:10.1016/j.surfin.2023.103273
摘要
Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM). Furthermore, RRAM is highly suitable for integration as a crossbar array (CBA). An RRAM-based CBA (R-CBA) shows various promising features in the fields of in-memory and neuromorphic computing. However, sneak-path current through unselected cells is a major obstacle in large-scale R-CBA development. To solve this issue, we propose a TiN/ZrOx/NbOx/Pt one selector–one resistor (1S1R) device structure that integrates the resistive switching and selector layer in a single stack. Material and electrical analyses were conducted to investigate the selector and resistive switching characteristics of the proposed device. The 1S1R device showed high selectivity (>5 × 101), low-resistance state/high-resistance state ratio (>5 × 101), long retention (>104 s), fast switching speeds (791 ns), stable operation, and excellent cell-by-cell variation. The conduction mechanism of the device was confirmed to be Schottky emission conduction. The maximum CBA size (139 × 139) was also obtained by calculating the read voltage margin. The proposed 1S1R device is suitable for large-scale CBA implementation and next-generation NVM.
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