ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors

2D metallic TiS x can be grown at low temperatures using atomic layer deposition (ALD). Herein, we show that ultrathin films of 2D TiS x (∼1.2 nm) prepared by ALD can be used as contacts to 2D MoS 2 in field-effect transistors (FETs) and improve the overall device metrics.