Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure

Two-dimensional (2D) organic-inorganic hybrid perovskites (OIPs) have exhibited ideal prospects for perovskite photodetectors (PDs) owing to their remarkable environmental stability, tunable band gap, and structural diversity. However, most perovskites face the great challenge of a narrow spectral response. Integrating 2D OIPs with a suitable wide band gap semiconductor gives opportunities to broaden the response spectra. Here, a photodetector based on the BA₂PbI₄/GaN heterostructure with a broadband photoresponse covering from the ultraviolet (UV) to visible band is designed. We demonstrate that the device is capable of detecting in the UV region by p-GaN being integrated with BA₂PbI₄. The morphology and material optical properties of BA₂PbI₄ are characterized by transmission electron microscopy (TEM) and photoluminescence (PL). Additionally, the current-voltage (I-V) characteristics and photoresponses of the BA₂PbI₄/GaN heterojunction photodetector are investigated. The response spectrum of the photodetector is broadened from the visible to UV region, exhibiting good rectifying behavior in the dark conditions and a broadband photoresponse from the UV to the visible region. Additionally, the energy band is used to analyze the current mechanism of the BA₂PbI₄/GaN heterojunction PD. This study is expected to provide a new insight of optoelectronic devices by integrating 2D OIPs such as BA₂PbI₄ and wide-band-gap semiconductors such as GaN to broaden the response spectra.