High-brightness Yellow Light-emitting Diode in A Single Ga-doped ZnO∶Ga Microwire Heterojunction

Abstract：Due to low-dimensional semiconductor micro/nano-structures，visible light-emitting devices，especially for green/yellow light sources locating in the wavelengths of 500-600 nm，have reached a broad audience in ultrahigh resolution display and lighting，single-photon source，singlemolecule sensing and imaging in life science and other fields.In developing high-performance green/ yellow light-emitting devices，the preparation of light-emitting materials and device structures is highly restricted by the"green/yellow gap"and"efficiency droop" .In the present research，a new generation of yellow light-emitting diode，which is composed of a single Ga-doped ZnO microwire (ZnO∶Ga MW) and p-type InGaN substrate，is demonstrated at a wavelength of 580 nm together with a linewidth of about 50 nm.With increasing the drive current at high injection levels，hardly little variation in the spectral profiles，such as the main emission wavelengths and the linewidth，