发射机
收发机
CMOS芯片
高电子迁移率晶体管
调制(音乐)
电气工程
无线
电子工程
相移键控
工程类
电信
物理
误码率
晶体管
频道(广播)
电压
声学
作者
Ibrahim Abdo,Hiroshi Hamada,Hideyuki Nosaka,Atsushi Shirane,Kenichi Okada
出处
期刊:IEICE Electronics Express
[Institute of Electronics, Information and Communication Engineers]
日期:2021-08-16
卷期号:18 (17): 20210314-20210314
被引量:8
标识
DOI:10.1587/elex.18.20210314
摘要
This letter presents a 300GHz hybrid transceiver using CMOS and InP-HEMT, which achieves a maximum data rate of 56Gb/s. A 300GHz CMOS transceiver with a mixer-last transmitter mixer-first receiver is utilized to up- and down-convert the V-band IF signal to the 300GHz-band, while InP-HEMT is used for PA and LNA design. The transceiver also achieves wireless communication in ch.13-24 (1.76Gbaud), ch.39-44 (3.52Gbaud), ch.52-54 (7.04Gbaud) and ch.59 (10.56Gbaud) with lower than -16.7dB EVM. 64QAM modulation is also achieved for a 5Gbaud symbol rate. The CMOS transmitter and receiver consume 0.29W and 0.17W from a 1V supply, respectively, and the InP-HEMT PA and LNA consume 1.44W from a 1.2V supply.
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