范德瓦尔斯力
材料科学
纳米结构
纳米线
锗
纳米技术
纳米尺度
硫化物
催化作用
化学物理
结晶学
化学工程
光电子学
化学
生物化学
有机化学
分子
硅
工程类
冶金
作者
Eli Sutter,Jacob S. French,Hannu‐Pekka Komsa,Peter Sutter
出处
期刊:ACS Nano
[American Chemical Society]
日期:2022-02-11
卷期号:16 (3): 3735-3743
被引量:10
标识
DOI:10.1021/acsnano.1c07349
摘要
Defects in two-dimensional and layered materials have attracted interest for realizing properties different from those of perfect crystals. Even stronger links between defect formation, fast growth, and emerging functionality can be found in nanostructures of van der Waals crystals, but only a few prevalent morphologies and defect-controlled synthesis processes have been identified. Here, we show that in vapor-liquid-solid growth of 1D van der Waals nanostructures, the catalyst controls the selection of the predominant (fast-growing) morphologies. Growth of layered GeS over Bi catalysts leads to two coexisting nanostructure types: chiral nanowires carrying axial screw dislocations and bicrystal nanoribbons where a central twin plane facilitates rapid growth. While Au catalysts produce exclusively dislocated nanowires, their modification with an additive triggers a switch to twinned bicrystal ribbons. Nanoscale spectroscopy shows that, while supporting fast growth, the twin defects in the distinctive layered bicrystals are electronically benign and free of nonradiative recombination centers.
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