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Characterization and optimization of ZnS thin film properties synthesis via chemical bath deposition method for solar cell buffer layer

化学浴沉积 薄膜 微晶 带隙 无定形固体 分析化学(期刊) 傅里叶变换红外光谱 捷克先令 材料科学 硫化锌 化学 化学工程 纳米技术 结晶学 光电子学 有机化学 工程类
作者
Zakarya Ahmed,Tareq Rahman,K.M.A. Hussain,Marina Khatun,Shahariar Chowdhury,T. Faruqe,F. T. Z. Toma,Ahmed Y. Ali‐Mohamed,M. N. I. Khan,Md. Monjarul Alam
出处
期刊:Main Group Chemistry [IOS Press]
卷期号:22 (1): 79-91 被引量:1
标识
DOI:10.3233/mgc-210127
摘要

Zinc Sulphide is one of most studied semiconductor with wide band gap (3.5–3.9 eV) versatile material due to its physical and chemical properties. ZnS is a non-toxic material and a suitable candidate to be a buffer layer for heterojunction solar cells. In this study, Zinc Sulphide (ZnS) thin films were deposited by chemical bath deposition technique using Zinc Acetate Dihydrate [Zn (CH3COO)2. 2H2O] and Thiourea [CH4N2S]. The ZnS thin films samples were characterized by UV-Vis NIR Spectroscopy, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDX), Fourier-Transform Infrared Spectroscopy (FTIR) and Thin-Film Measurement Instrument. FTIR spectra confirmed the presence of ZnS bond in the crystalline thin film. XRD data confirmed the cubic structure of the deposited thin film only when the amount of Thiourea was increased and the complexing agent Hydrazine Hydrate was replaced with Tri-Sodium Citrate. Crystallite size and strain were estimated using Debye-Scherrer model and Williamson-Hall model and lattice constant was estimated using Nelson-Riley plot. Otherwise, XRD showed the amorphous phase. UV-Vis data confirmed ZnS thin films as enough transmittive and it showed higher bandgap. Thin-Film Measurement Instrument was used to measure the thickness of the ZnS thin films. Synthesized ZnS thin films exhibited promising characteristics for using as the buffer layer of the heterojunction solar cells. Highlights • ZnS thin films were prepared successfully by simple, low cost and environment friendly chemical bath deposition method. • XRD measurement confirmed both Amorphous and Crystalline phase of ZnS thin films. • By changing the precursor only can be achieved crystalline phase from amorphous phase of ZnS thin film. • The amount of precursor and deposition conditions can be optimized to produce crystalline ZnS thin film.

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