MOSFET
材料科学
光电子学
碳化硅
二极管
功率MOSFET
PIN二极管
功率半导体器件
表征(材料科学)
击穿电压
宽禁带半导体
电压
结温
电子工程
作者
Kang Peng,Soheila Eskandari,Enrico Santi
出处
期刊:Applied Power Electronics Conference
日期:2016-03-20
卷期号:: 2127-2135
被引量:27
标识
DOI:10.1109/apec.2016.7468161
摘要
In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode. The reverse recovery of SiC MOSFET's body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET's body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET's body diode. The parameter extraction procedure for this body diode model is given. The validation of the body diode model shows good agreement between simulation and experimental results, which proves the accuracy of the model.
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