Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics

Abstract We have fabricated and characterized all-MoGe Josephson junctions with a very thin Al/AlO x /(Al) barrier, where the amorphous MoGe films exhibit superconducting transition temperatures up to 7 K. Due to the uniformity of the surface morphology of the MoGe films, the junctions demonstrate high uniformity of their tunneling properties. The experimental data on the temperature dependence of the subgap current agree well with theoretical calculations. The results obtained imply that Josephson tunnel junctions based on amorphous superconductors are promising candidates for use in superconducting electronics, especially in applications requiring multiple stacked junctions or the creation of a nonequilibrium quasiparticle distribution.