Experimental study of single-crystal GaN wafer electro-Fenton magnetorheological complex friction wear

A magnetorheological electro-Fenton composite polishing technique is proposed to achieve high-efficiency polishing of GaN. In this study, polishing is simulated using a magnetorheological micropolishing nose as a frictional substrate to investigate the tribological behavior of GaN under different conditions (ambient medium, H2O2, and catalyst). Results show that hydroxyl radicals (·OH) can effectively corrode GaN and increase its coefficient of friction. The electro-Fenton reaction, frictional heat, and shear stress all affect material removal in the same way. This in turn determines wear behavior and morphology. With the use of Fe–C as catalyst, the best material removal effect is achieved by continuously adding H2O2 at 0.30 g/min. The results of this study provide theoretical support for GaN magnetorheological electro-Fenton composite polishing.