Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio

Schottky photodiodes with sputtered amorphous Ga 2 O 3 (a-Ga 2 O 3 ) and asymmetric electrodes were fabricated for the first time and achieved excellent performances under 254-nm light illumination with the superhigh responsivity of 1021.8 A W -1 , high photo-to-dark current ratio of 2.3 × 10 6 , fast rise/decay response time of 144/208 ms, high detectivity of 1.66 × 10 16 Jones, and high external quantum efficiency of 5.0 × 10 5 %. The excellent solar-blind detection performances are suggested to be attribute to the large concentration of oxygen vacancies, the possible photo released carriers from the deep-level acceptors, and the high film uniformity, while the former two contribute to the high photo carrier concentration, and the latter one contributes to high quality Schottky contact to achieve the low dark current. A 10 × 10 array based on these a-Ga 2 O 3 Schottky photodiodes realized the imaging of a “E” character with high contrast. The results give a feasible way to achieve large area, low cost, high contrast, and high detection sensitivity solar-blind imaging. • Schottky photodiodes with sputtered amorphous Ga 2 O 3 and asymmetric electrodes were fabricated for the first time. • The responsivity, response time, and photo-to-dark current ratio of the amorphous Ga 2 O 3 Schottky photodiodes are comparable to or even better than reported high-performance crystalline Ga 2 O 3 Schottky photodiodes. • A 10 × 10 array based on amorphous Ga 2 O 3 Schottky photodiodes realized the imaging of a “E” character with high contrast. • This work provides a feasible way to achieve large area, low cost, high contrast, and high detection sensitivity solar-blind imaging.