Design and optimization of edge termination for 8.5kV RB-IGCT

A new double negative beveled angle edge termination structure, which utilises a mesa-like chamfer and decouples the junction depth of the active region and edge termination, has been proposed and the rule of the effect of various structural parameters on the edge termination's breakdown voltage has been analysed. An optimization approach for the edge termination's structural parameters is presented, which can resolve the dual contradiction between the edge termination's breakdown voltage and the active region's performance, as well as the edge termination's breakdown voltage and process feasibility. TCAD simulation studies indicate that, under given conditions, the effective utilization rate of the chip area reaches 90.572%, while the breakdown voltage efficiency reaches 93.3%.