First-principles calculations to investigate the dielectric and optical anisotropy in two-dimensional monolayer calcium and magnesium difluorides in the vacuum ultraviolet

电介质 材料科学 折射率 防反射涂料 光学 光电子学 分子物理学 化学 涂层 复合材料 物理
作者
Vipin Kumar,Rajneesh Kumar Mishra,Hwajun Jeon,Pushpendra Kumar,Rajeev Ahuja,Jin Seog Gwag
出处
期刊:Journal of Physics and Chemistry of Solids [Elsevier BV]
卷期号:181: 111482-111482 被引量:5
标识
DOI:10.1016/j.jpcs.2023.111482
摘要

Anisotropic dielectric and optical properties of two-dimensional (2D) calcium and magnesium difluorides were investigated in the vacuum ultraviolet (VUV) region of the electromagnetic spectrum (EM) using the first principles density functional theory (DFT). The anisotropy between the in-plane and out-of-plane directions shows that these materials are uniaxial, exhibiting optical and dielectric anisotropy. The optical functions of these anisotropic materials-optical absorption, photoconductivity, refractive index, reflection and extinction coefficients, and electron energy loss (EEL) spectra-are calculated in the framework of DFT. The low refractive index values and relatively small extinction coefficient make these materials alternative low-index 2D materials for the long wavelengths in the VUV region of the EM spectrum. The reflection and transmission spectra indicate the antireflective property of these materials. The calculated EEL function shows less energy loss of fast-traveling electrons in the material's medium. The maxima in the EEL spectrum are the main feature of plasma oscillations. The dissipation in the incident light radiation energy propagating through the dielectric medium is estimated with the dielectric loss tangent (tanδ). The magnesium difluoride is identified as a less dielectric loss medium than calcium difluoride in the VUV region. The present results suggest that these 2D materials are promising in low refractive index, high reflective, and antireflective coating materials in optoelectronic device applications. Also, electronic studies revealed that these are excellent materials for gate insulators in field-effect transistors based on 2D electronic materials.
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