The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In 2 Se 3 /MoS 2 /graphene heterostructure

%. These findings suggest the importance of ferroelectric vdW heterostructures in the design of FTJs and propose a promising route for applying the 2D ferroelectric/semiconductor heterostructures with out-of-plane polarization in high-density ferroelectric memory devices.