The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In2Se3/MoS2/graphene heterostructure

The schematic diagram of the Gr/In 2 Se 3 /MoS 2 /Gr vdW FTJs. Switching the polarization direction of In 2 Se 3 can result in a different tunneling current and thus realizes two ideal “1” and “0” states for data storage.