Interface polarization in two-dimensional MnS-based antiferromagnetic tunnel junctions

• The limitation of spin simplicity of AFM materials was overcome and AFMTJs exhibited spin polarizability. • TMR values up to 455% were obtained. • The polarization property originates from the interfacial structure independent of the scattering layer. In comparison to conventional magnetic tunnel junctions (MTJs), antiferromagnetic tunnel junctions (AFMTJs) exhibit enhanced stability and faster operational characteristics, rendering them more advantageous as components for magnetoresistive random access memory (MRAM). Nonetheless, the phenomenon of magnetic moment compensation within AFMTJs leads to a suppression of spin polarization, which in turn results in a diminished tunnel magnetoresistance (TMR) effect. Consequently, the enhancement of spin polarization in AFMTJs has emerged as a critical area of investigation. This study theoretically investigates the spin-dependent transport properties of van der Waals AFMTJs constructed from two-dimensional MnS material, employing a computational approach based on the coupled non-equilibrium Green’s function and density functional theory. Owing to the superior interface polarization characteristics of MnS along the Z-axis, these AFMTJs exhibit remarkable interface polarization properties, achieving a TMR of up to 455.34%. The findings of this research are in complete agreement with the fundamental principles of quantum mechanics, thereby affirming the validity of the results. Our investigation substantiates the interface polarization characteristics of MnS, thereby providing a theoretical foundation for the implementation of MnS-based AFMTJs in MRAM applications.