光电探测器
材料科学
宽带
探测器
光电子学
电极
纳米技术
光学
物理
量子力学
作者
Jiamin Jiang,Xueming Fan,He Yu,Yunlu Lian,Jinling Xie,Lixin Liu,Boo Hyun An,Yichao Yan,Jiayue Han,Weizhi Li,Jun Gou,Zhiming Wu,Jun Wang
标识
DOI:10.1002/adom.202502244
摘要
Abstract The self‐powered and ultra‐broadband photodetectors based on the photothermoelectric (PTE) effect hold significant promise for diverse applications, including night vision, environmental monitoring, and gas sensing. However, existing PTE materials, primarily based on 2D or bulk materials, face limitations in flexible applications and large‐area array integration. Here, it is demonstrated that a flexible PTE photodetector constructed from a large‐area bismuth telluride (Bi 2 Te 3 ) film, coupled with an asymmetric electrode structure. The temperature gradient generated by the asymmetric electrode configuration induces carrier diffusion, resulting in the generation of photovoltage via the PTE effect, even under global illumination. The device exhibits broadband photoresponse across the spectral range from 0.405 to 10.37 µm at room temperature, achieving a detectivity of 1.39 × 10 8 Jones at 10.37 µm. Furthermore, the photodetector is integrated into a gas‐sensing system, achieving a limit of detection (LOD) of ≈100 ppm for CO 2 in its self‐powered mode without external circuits. This work paves the way for the development of flexible, CMOS‐compatible, and cost‐effective optical gas sensors with integrated multifunctionality.
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