无杂散动态范围
有效位数
线性化
逐次逼近ADC
电荷(物理)
物理
电压
光学
光电子学
电容器
非线性系统
量子力学
动态范围
CMOS芯片
作者
Gabriele Zanoletti,Lorenzo Scaletti,Gabriele Bè,Luca Ricci,Michele Rocco,Luca Bertulessi,Carlo Samori,Andrea Bonfanti
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2023-11-28
卷期号:71 (3): 1551-1555
被引量:3
标识
DOI:10.1109/tcsii.2023.3336943
摘要
This brief presents a linearity enhancement method, named charge linearization technique (CLT), for top-plate input successive approximation register (SAR) data converters. The proposed CLT removes the linearity degradation due to the non-linear parasitic capacitance of the comparator. Consequently, the constraint on the size of the comparator is relieved. An 11-bit redundant SAR converter featuring the proposed linearization method has been designed and fabricated in a 28-nm CMOS process. The converter achieves a 61.3-dB signal-to-noise-and-distortion ratio (SNDR) and 80.7-dB spurious-free dynamic range (SFDR) while running at 250 MS/s and consuming 5.04 mW from a 0.9-V supply. The aforementioned techniques enhances the SNDR and SFDR by up to 2.5 dB and 17.4 dB, respectively.
科研通智能强力驱动
Strongly Powered by AbleSci AI