栅氧化层
氧化物
浅沟隔离
材料科学
光电子学
退火(玻璃)
MOSFET
辐照
阈值电压
随时间变化的栅氧化层击穿
阈下斜率
泄漏(经济)
电气工程
沟槽
分析化学(期刊)
物理
电压
纳米技术
化学
工程类
晶体管
核物理学
图层(电子)
经济
冶金
复合材料
宏观经济学
色谱法
作者
Ruidi Wang,Zhixuan Li,Ming Qiao,Xin Zhou,Tianqi Wang,Bo Zhang
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2020-09-01
卷期号:67 (9): 2009-2014
被引量:11
标识
DOI:10.1109/tns.2020.2965286
摘要
In this article, the total ionizing dose (TID) effect is investigated in the 30-V split-gate trench (SGT) Vertical double diffused MOSFET (VDMOS). The complex trench structure, including gate oxide, split-gate oxide, and isolation oxide, is carefully studied to reveal the degradation mechanisms. Due to the multioxidation and annealing processes, the trench structure suffers serious oxide defeats. The analytical result shows a larger trapping efficiency (f ot ) compared to the planar gate technology, leading to significant V th shifts and subthreshold leakage. Meanwhile, irradiation-induced trapped charges in the split-gate oxide have a great influence on the electric field profile in bulk, which gives rise to breakdown voltage (BV) degradation. The experimental result shows that BV presents a gradient descent and drops to as low as 14 V at 100 krad(Si). Through TCAD simulation and analytical calculation, these TID responses are evaluated, and three approaches have been proposed for the radiation hardness of SGT VDMOS.
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