Dopant redistribution induced by Ni silicidation at 300°C

The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300/spl deg/C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni/sub 2/Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.