夹紧
晶界
材料科学
偶极子
载流子
微晶
凝聚态物理
电荷(物理)
离子键合
航程(航空)
化学物理
化学
物理
复合材料
光电子学
离子
微观结构
冶金
计算机科学
量子力学
计算机视觉
有机化学
作者
Doru C. Lupascu,Yuri A. Genenko,Nina Balke
标识
DOI:10.1111/j.1551-2916.2005.00663.x
摘要
The reorientation of defect dipoles and the drift of free charge carriers are the most prominent microscopic mechanisms under discussion to provoke the aging effect in ferroelectrics. These two mechanisms are contrasted taking into account the influence of grain boundaries in a polycrystalline material. For the drift model, clamping pressures on domain walls only depend on geometry and on the transport properties of the mobile defect charge carrier independent of its electronic or ionic nature. For a numerical example clamping pressures as a result of drift of oxygen vacancies are determined in BaTiO3. They range from 106 to 107 Pa corresponding to experimental values.
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