二硫化钼
材料科学
兴奋剂
纳米技术
钼
工程物理
光电子学
复合材料
冶金
工程类
作者
Phuong V. Pham,Geun Young Yeom
标识
DOI:10.1002/adma.201506402
摘要
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2 ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2 -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2 in industry, as a guide for 2D material community, are also provided.
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