电负性
材料科学
三元运算
结晶学
费米能级
延展性(地球科学)
硼化物
金属
化学键
态密度
粘结长度
密度泛函理论
电子结构
债券定单
晶体结构
凝聚态物理
计算化学
化学
冶金
电子
物理
蠕动
有机化学
量子力学
计算机科学
程序设计语言
作者
Pernilla Helmer,Hans Lind,Martin Dahlqvist,Johanna Rosén
标识
DOI:10.1088/1361-648x/ac51fe
摘要
The laminated ternary boride Mo5SiB2of T2 structure have two symmetrically inequivalent metallic sites, 16l and 4c, being occupied in a 4:1 ratio. The phase was recently shown to be stable for 80% substitution of Mo for Ti, at the majority site, forming an out-of-plane chemically ordered quaternary boride: Ti4MoSiB2. Considering that the hypothetical Ti5SiB2is theoretically predicted as not stable, a key difference in bonding characteristics is indicated for full substitution of Mo for Ti at the metallic sites. To explore the origin of formation of Ti4MoSiB2, we here investigate the electronic properties and bonding characteristics of Mo5SiB2, Ti4MoSiB2and Ti5SiB2through their density of states, projected crystal orbital Hamilton population (pCOHP), Bader charge partitioning and second order force constants. The bond between the two different metallic sites is found to be key to the stability of the compounds, evident from the pCOHP of this bond showing a peak of bonding states close to the Fermi level, which is completely filled in Mo5SiB2and Ti4MoSiB2, while only partially filled in Ti5SiB2. Furthermore, the lower electronegativity of Ti compared to Mo results in charge accumulation at the Si and B sites, which coincides with a reduced bond strength in Ti5SiB2compared to Mo5SiB2and Ti4MoSiB2. Bandstructure calculations show that all three structures are metallic. The calculated mechanical and elastic properties show reduced bulk (B) and elastic (E) moduli when introducing Ti in Mo5SiB2, from 279 and 365 GPa to 176 and 258 GPa, respectively. The Pugh criteria indicates also a slight reduction in ductility, with aG/Bratio increasing from 0.51 to 0.59.
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