凝聚态物理
MOSFET
磁电阻
材料科学
场效应晶体管
自旋晶体管
磁化
异质结
自旋(空气动力学)
晶体管
铁磁性
磁性半导体
自旋霍尔效应
光电子学
自旋极化
磁场
电压
物理
电子
热力学
量子力学
作者
Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka
摘要
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current IDS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate IDS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.
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