材料科学
串联
缓冲器(光纤)
钙钛矿(结构)
图层(电子)
终端(电信)
硅
氧化物
光电子学
化学工程
无机化学
纳米技术
复合材料
冶金
计算机网络
电信
计算机科学
化学
工程类
作者
Haicheng Li,Bo Gao,Yang Liu,Shibo Wang,Kun Gao,Wei Shi,Fengxian Cao,Xiang Chen,Wenhao Li,Yao Li,Bowen Yang,Chang Wang,Wenhao Li,Cao Yu,Xiaohong Zhang,Xinbo Yang
标识
DOI:10.1002/aenm.202501762
摘要
Abstract Perovskite/silicon tandem solar cells have emerged as a promising candidate for next‐generation photovoltaics, offering a pathway to surpass the efficiency limits of single‐junction devices. However, the integration of a buffer layer between the electron transport layer and the transparent electrode is critical for maintaining structural integrity and optimizing charge extraction and stability. Here, the fabrication of a chemically stable and multifunctional buffer layer, magnesium oxide (MgO x ), via thermal evaporation is demonstrated in four‐terminal perovskite/silicon tandem solar cells. The introduction of MgO x enhances electron extraction while effectively mitigating damage caused by the sputtering process used for subsequent layers. As a result, the optimized device achieves a power conversion efficiency exceeding 32%, along with exceptional operational stability, MgO x device retains 80% of its initial efficiency after 400 h of continuous MPPT testing. This work highlights the pivotal role of buffer layer engineering in advancing high‐performance tandem solar cells and provides a scalable route toward efficient and durable perovskite/silicon photovoltaics.
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