Design and application of germanium based complementary TFET devices with step tunneling paths

Expanding tunneling has consistently been one of the approaches to enhance the on-state current (Ion) and performance of Tunnel Field-Effect Transistor (TFET). This paper proposes a novel structure for TFET called Step Tunneling Path TFET (STP TFET). The stepped tunneling path is achieved by preparing majority carrier channel and introducing pocket doping layers and lightly doped channel extension regions in the channel. Taking Germanium TFET as an example, the complementary structures, electrical parameters, DC and analog characteristics of STP TFET are investigated. Simulation results demonstrate that, compared to normal TFET, STP TFET exhibits significant improvements in Ion (n-TFET∼18/p-TFET∼45 times), cut-off frequency (n-TFET∼6/p-TFET∼16 times), Gain Bandwidth Product enhancement (n-TFET∼22/p-TFET∼16 times), and Transconductance Frequency Product enhancement (n-TFET∼3/p-TFET∼15 times). Furthermore, in the C-TFET inverter, the transient rise and fall times have decreased by 149 and 199 ns, respectively, while the voltage gain has increased by 6.7 times. The proposed device shows promising potential for applications in high-speed and low-power circuit designs.