量子隧道
磁电阻
材料科学
光电子学
凝聚态物理
物理
磁场
量子力学
作者
Haiyang Pan,Anil Kumar Singh,Chusheng Zhang,Xueqi Hu,Jiayu Shi,Liheng An,Naizhou Wang,Ruihuan Duan,Zheng Liu,Stuart S. P. Parkin,Pritam Deb,Weibo Gao
出处
期刊:InfoMat
[Wiley]
日期:2024-03-07
摘要
Abstract The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room‐temperature tunneling magnetoresistance through electronic means in a full vdW Fe 3 GaTe 2 /WSe 2 /Fe 3 GaTe 2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy‐dependent localized spin states in the metallic ferromagnet Fe 3 GaTe 2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room‐temperature tunable spintronic devices based on vdW magnet heterostructures.
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