High‐performance MoS2 Homojunction Photodiode Enabled by Facile Van der Waals Contacts with 2D Perovskite

Abstract p–n junction, as an important part of modern electronics and integrated circuits, is the basis of various functional devices. Compared with heterojunctions, 2D p–n homojunctions preclude interface problems and have greater potential in ultra‐sensitive photodetection. Here, through simple van der Waals contacts with a 2D perovskite layer, it is realized efficient p‐type doping of MoS 2 and constructed a high‐performance photodiode based on MoS 2 homogeneous p–n junction. The dark current is as low as 10 −12 A, with an ideality factor of 1.3. Under illumination, the open circuit voltage of the device can reach up to 0.7 V. In addition, under zero bias, the device exhibits a high responsivity of 529 mA W −1 and a fast response time of 105/109 µs. This work not only provides a facile and stable method to construct the MoS 2 p–n homojunction but also opens up possibilities for new‐type 2D‐based optoelectronic devices and technologies.