C- and L-band low polarization sensitive nanosecond 1×2 electro-optic MZI switch on 3-µm thick silicon platform

We fabricated and assessed a wideband (C-/L- band) nanosecond 1×2 electro-optic switch in 3-µm thick silicon. Results show 2.5dB lowest insertion loss, 16dB averaged extinction ration, 2.5dB polarization dependent loss and 6-ns switching time.