异质结
兴奋剂
材料科学
光电子学
凝聚态物理
纳米技术
物理
作者
Da-Wei Deng,Rutong Si,Bo Wen,Nicola Seriani,Xiaolin Wei,Wen‐Jin Yin,Ralph Gebauer
摘要
A nonvolatile self-doping strategy through fabricating two different 2D polar semiconductors (GaN/MoSSe) into vdW heterostructures could theoretically achieve high concentrations of carriers (>3.48 × 10 12 ).
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