极紫外光刻
极端紫外线
变形(气象学)
材料科学
热的
热膨胀
光学
抵抗
紫外线
复合材料
光电子学
物理
激光器
气象学
图层(电子)
作者
Chung-Hyun Ban,In-Hwa Kang,Won-Yung Choi,Hye-Keun Oh
出处
期刊:Journal of micro/nanopatterning, materials, and metrology
[SPIE - International Society for Optical Engineering]
日期:2021-08-31
卷期号:20 (03)
被引量:6
标识
DOI:10.1117/1.jmm.20.3.031012
摘要
Background: Repeated exposure of extreme ultraviolet (EUV) masks to UV radiation exacerbates the thermal deformation of the constituent materials. In particular, for systems with high numerical apertures (NAs) in next-generation EUV lithography machines, new structures and materials are needed to negate the shadow and three-dimensional effects of masks. However, because masks with such materials and structures have larger absorption and thermal expansion coefficients than conventional EUV masks, they may undergo new, unidentified thermal deformations. Aim: This study aimed to evaluate the temperature accumulation and thermal deformation of EUV masks owing to radiation exposure. Approach: The temperature accumulation and thermal deformation in EUV masks were compared and analyzed using various cooling conditions and patterns as well as various materials and structures. Results: The thermal deformation increased with increasing pattern density. The results indicate that more careful control could be required regarding the pattern density and shape. Compared with conventional EUV masks, the high-NA EUV masks exhibited considerable thermomechanical deformations owing to their different multilayers and absorbers. However, the deformation could be reduced to the level of conventional EUV mask deformation through appropriate cooling. Conclusions: The thermal deformation due to exposure is intensified depending on the mask structure, material, and pattern change; however, the thermal deformation can be alleviated with proper mask cooling.
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