Development of cylinderical cavity type microwave plasma chemical vapor deposition reactor for diamond films deposition

Summary form only given. While microwave plasma chemical vapor deposition (MPCVD) method remains the only option to prepare high quality diamond films, low deposition rate remains the primary concern of the technique. Up until now, there has been a continuous search for new and more efficient high power MPCVD reactors. In this paper, a new cylindrical cavity type MPCVD reactor operated primarily on TM021 resonant mode will be described. To optimize the MPCVD reactor, a phenomenological method has been used, to systematically simulate distributions of both microwave electric field and hydrogen plasma. And then, experiments were conducted to demonstrate that with the newly built MPCVD reactor, a high input microwave power of 8 kW could be reached, and at this microwave power level, high quality diamond films could be deposited at a rate of more than 3 μm/hr.