分析化学(期刊)
化学气相沉积
体积流量
氧化物
化学
薄膜
硅
基质(水族馆)
沉积(地质)
大气温度范围
材料科学
纳米技术
生物
海洋学
量子力学
物理
地质学
古生物学
气象学
色谱法
有机化学
沉积物
作者
S. Croci,Alexandra Pecheur,Jean‐Luc Autran,A. Vedda,F. Caccavale,M. Martini,G. Spinolo
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2001-09-01
卷期号:19 (5): 2670-2675
被引量:9
摘要
Silicon dioxide films have been deposited by plasma-enhanced chemical vapor deposition at low substrate temperature (50 °C) in a parallel-plate reactor using hexamethyldisilazane (HMDS), diluted in He, and O2 as Si and O precursors. The effect of the O2/(HMDS+He) flow rate ratio on the oxide properties has been investigated in the range of 0.05–1.25 by means of deposition rate, wet etching rate, secondary ion mass spectrometry, thermally stimulated luminescence, and high frequency capacitance–voltage measurements. Both the deposition rate and the etching rate increase by increasing the O2/(HMDS+He) flow rate ratio and reach a constant value at flow rate ratios higher than 0.6. The strong increase and saturation in the deposition rate can be attributed to the impinging oxide atoms flux and to the consumption of silyl radicals at the deposition surface, respectively. The Si/SiO2 interface state density and the positive fixed charge density are in the range 1×1011–1×1012eV−1 cm−2 and 6×1011–1.5×1012C cm−2, respectively. These concentrations are comparable with literature data concerning SiO2 films obtained by plasma enhanced chemical vapor deposition at temperatures higher than 200 °C using other Si precursors. Moreover, the interface state density decreases while the fixed oxide charge increases by increasing the O2/(HMDS+He) flow rate ratio. A correlation has been found between defects monitored by thermally stimulated luminescence and fixed oxide charges. From a comparison with secondary ion mass spectrometry results, the fixed oxide charges can be preliminarily attributed to intrinsic defects.
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