电子
氮气
材料科学
接口(物质)
原子物理学
分子物理学
俘获
凝聚态物理
电子密度
深能级瞬态光谱
化学
物理
核物理学
有机化学
复合材料
毛细管数
毛细管作用
作者
John Rozen,Sarit Dhar,Mary Ellen Zvanut,John R. Williams,Leonard C. Feldman
摘要
Nitridation of the SiO2/SiC interface yields a reduction in interface state density, immunity to electron injection, as well as increased hole trapping. It is shown that the accumulation of nitrogen at the oxide/semiconductor interface is solely responsible for these three effects. The evolution of the density of interface states, electron traps, and hole traps is measured in metal-oxide-semiconductor capacitors as a function of the nitrogen content which is varied by adjusting the gate oxide NO annealing time. A rate equation is derived to model the change in the interface state density, observed at various energy levels, in terms of nitrogen binding cross-sections. While the generation of acceptor interface states upon electron injection is suppressed after minimum N incorporation, the density of oxide hole traps appears to scale linearly with the amount of nitrogen. The origin and the properties of the N-induced hole traps resembles those of the defects responsible for enhanced negative bias temperatur...
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