材料科学
锡
基质(水族馆)
溅射
薄膜
沉积(地质)
复合材料
电导率
溅射沉积
涂层
腔磁控管
体积流量
电阻率和电导率
冶金
纳米技术
化学
电气工程
古生物学
生物
海洋学
物理化学
沉积物
工程类
量子力学
地质学
物理
作者
Zhi Yan,Tao Li,Qian Wang,Hongjiao Li,Yao Wang,Chaoling Wu,Yigang Yan,Yungui Chen
出处
期刊:Coatings
[MDPI AG]
日期:2022-03-27
卷期号:12 (4): 454-454
被引量:2
标识
DOI:10.3390/coatings12040454
摘要
The properties of thin films are often influenced by the crystal’s preferred orientation. In the present study, we report the strong dependence of surface conductivity on the preferred orientation of TiN film that acts as the coating material for Ti bipolar plate. The preferred orientation of TiN film is successfully controlled along the (111) or (200) planes by adjusting the N2 flow rate or Ti substrate temperature during the deposition process via DC (direct current) reactive magnetron sputtering. Small N2 flow rate of 3 to 6 sccm or low substrate temperature (e.g., 25 °C) facilitates the growth of TiN films along the (111). The (111) preferred orientated TiN films show much lower interfacial contact resistance (ICR) than the (200) preferred orientated films. A considerably low ICR value of 1.9 mΩ·cm2 at 140 N/cm2 is achieved at the N2 flow of 4 sccm and the substrate temperature of 25 °C.
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