Diameter enlargement of SiC bulk single crystals based on simulation and experiment

This study employs the physical vapor transport method for diameter enlargement of silicon carbide single crystal. Numerical simulations were utilized to investigate the impact of different crucible designs on crystal enlargement. The guiding angle and ratio of seed diameter to crucible inner diameter are thoroughly examined in this study. Simulations demonstrated that under appropriate conditions for crystal growth, there is no deposition of poly-SiC around the periphery of ingot. These findings were well validated through crystal growth experiments. Subsequently, the crucible was optimized based on the simulation results for crystal growth. The final achievement was the successful enlargement of silicon carbide single crystal from 150 mm to 200 mm, with Raman mapping analysis confirming the absence of foreign polytypes around the periphery of ingot.