光子上转换
材料科学
光电子学
直接成像
聚集诱导发射
纳米技术
光学
发光
荧光
物理
作者
Shilong Dong,Yi Zhang,Zehong Wang,Jin Li,Zichun Zhou,Lei Zhu,Hongliang Zhong,Feng Liu,Xuesong Jiang
标识
DOI:10.1002/adom.202400912
摘要
Abstract Infrared upconversion devices (UCDs) enable NIR imaging without array and readout circuits, making them desirable for portable sensor, imaging and monitoring. However, the exorbitant cost and difficulties in fabrication associated with vacuum‐deposited materials, which are usually employed in high‐performance UCDs, restrict their application in flexible‐stretchable systems. Here, a solution‐processed upconversion device (s‐UCD), which is composed of detector and emitter, with high conversion efficiency and low turn‐on voltage achieved by device structure design and interlayer engineering is reported. The role of the electron blocking layer is investigated in s‐UCDs, and a peak luminance of 5,500 cd m −2 @7 V and a luminance on‐off ratio of 110000 @5.25 V are achieved. The s‐UCDs exhibit high resolution, microsecond response time and are compatible with flexible substrates. With the high‐performance large‐area s‐UCDs, direct non‐invasive transmission‐based bioimaging applications with high quality of bioimaging are further performed. It is believed that the s‐UCD imaging system offers potential applications for portable low‐cost non‐invasive tissue analysis, disease diagnosis, and virtual reality.
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