Selective facet shielding induced epitaxial deposition along the Zn (101) plane for highly reversible Zn-Ion batteries

Uncontrolled dendrite growth and water-induced parasitic reactions have become the major roadblocks for the widespread commercialization of Zn-ion batteries (ZIBs). Tailoring Zn deposition behavior is recognized as an effective strategy to stabilize the Zn anode, particularly by exposing the (101) plane with strong epitaxial growth features. However, the realization of ordered (101) plane-dominant Zn deposition at high capacity is highly challenging due to its high surface energy. Herein, the vertically oriented Zn plating with a preferential growth of (101) plane is designed by using 3-(N-morpholino)-2-hydroxypropanesulfonic acid-dimethyl sulfoxide (MOPSO-DMSO) as the electrolyte additive . MOPSO-DMSO molecules preferentially anchor on the Zn (002) crystal plane, and the deposition of Zn atoms on Zn (002) facet is hindered by the sulfonate and N-morpholino groups of MOPSO-DMSO molecules, thereby favoring the preferred growth of the (101) plane. This distinctive growth pattern enables an ultra-stable Zn plating/stripping even at 50 mA cm −2 , achieving an impressive cumulative capacity of 5250 mAh cm −2 . Furthermore, the Zn||Zn symmetric cell demonstrates stable cycling over 1100 h at 5 mA cm −2 and 5 mAh cm −2 . This work offers a profound insight into the achievement of high-performance Zn anodes via modulation of selective crystal plane.