异质结
材料科学
光电子学
半导体
金属
场效应晶体管
氧化物
晶体管
纳米技术
电压
电气工程
冶金
工程类
作者
Olli Pekka Kilpi,Johannes Svensson,Jeff Wu,Axel R. Persson,Reine Wallenberg,Erik Lind,Lars‐Erik Wernersson
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-09-14
卷期号:17 (10): 6006-6010
被引量:37
标识
DOI:10.1021/acs.nanolett.7b02251
摘要
III–V compound semiconductors offer a path to continue Moore’s law due to their excellent electron transport properties. One major challenge, integrating III–V’s on Si, can be addressed by using vapor–liquid–solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal–oxide–semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III–V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.
科研通智能强力驱动
Strongly Powered by AbleSci AI