Electrical transport properties in Ge hyperdoped with Te

Abstract In this work we have successfully hyperdoped germanium with tellurium with a concentration peak of 10 21 cm −3 . The resulting hyperdoped layers show good crystallinity and sub-bandgap absorption at room temperature which makes the material a good candidate for a new era of complementary metal-oxide-semiconductor-compatible short-wavelength-infrared photodetectors. We obtained absorption coefficients α higher than 4.1 × 10 3 cm −1 at least up to 3 µ m. In this study we report the temperature-dependency electrical properties of the hyperdoped layer measured in van der Pauw configuration. The electrical behaviour of this hyperdoped material can be explained with an electrical bilayer coupling/decoupling model and the values for the isolated hyperdoped layer are a resistivity of 4.25 × 10 − 3 Ω ⋅ cm with an electron-mobility around −100 cm 2 V −1 s −1 .