MOSFET
阈下传导
绝热过程
逻辑门
功率延迟产品
电子线路
电气工程
电子工程
光电子学
材料科学
物理
晶体管
电压
CMOS芯片
工程类
加法器
热力学
作者
Tanushree Ganguli,Manash Chanda,Angsuman Sarkar
标识
DOI:10.1109/ted.2023.3327348
摘要
In this article, junctionless MOSFET-based adiabatic logic circuits have been analyzed in the subthreshold regime. The junctionless MOSFET has been calibrated on the basis of the experimental results, and then, the impact of the aspect ratio on the power, delay, and power delay product (PDP) has been investigated in depth. Besides, the impact of the interface trap charges (ITCs) is also discussed. The analytical modeling of the power and delay considering the ITC has also been detailed. SILVACO ATLAS has been used to simulate the junctionless MOSFET-based subthreshold adiabatic logic circuits and to validate the analytical models. The impact of the Schottky barrier on digital performances has also been shown here to present clear ideas.
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