材料科学
抛光
研磨
钻石
硅
碳化硅
金刚石工具
金刚石研磨
冶金
纳米技术
光电子学
工程物理
金刚石车削
砂轮
工程类
作者
Dong Shi,Kaiping Feng,Tianchen Zhao
标识
DOI:10.1149/2162-8777/adc835
摘要
Abstract Workpiece rotational grinding is the main method of the planarization and backside thinning processing for large-sized silicon wafers, but surface/subsurface damage is inevitable. To reduce machining damage and ensure machining efficiency, we propose a mechanical chemical grinding method combining catalytic oxidation and solid-state reaction. A resin grinding tool mixed with iron oxide and diamond was developed using a hot pressing method, and polishing experiments were conducted on monocrystal silicon. The polishing performance of monocrystal silicon using different abrasive tools and polishing solutions was studied. In dry and water polishing, the material removal rates for diamond, iron oxide, and the hybrid abrasive tool are 10.5, 0.6, and 1.8 mg and 54.1, 16.3, 34.3 mg, respectively. In hydrogen peroxide polishing, the material removal rates for iron oxide and the hybrid abrasive tool were 8.4 and 17 mg, respectively. When using different abrasive tools for polishing, the hybrid abrasive tool achieves the best surface quality in water polishing, with minimal scratch scales and a clean surface. Therefore, combing water polishing and the mixed abrasive tool can achieve the best surface quality and moderate material removal rate. The result provides a new idea to achieve efficient grinding with low damage for monocrystal silicon.
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