杰纳斯
材料科学
压电
堆积
极化(电化学)
纳米技术
凝聚态物理
光电子学
复合材料
化学
核磁共振
物理
物理化学
作者
Haifang Cai,Yufeng Guo,Huajian Gao,Wanlin Guo
出处
期刊:Nano Energy
[Elsevier BV]
日期:2018-11-13
卷期号:56: 33-39
被引量:67
标识
DOI:10.1016/j.nanoen.2018.11.027
摘要
Semiconducting Janus transition metal dichalcogenides (TMDs) are attractive for application in nanoscale electricity harvesting devices as their strong out-of-plane piezoelectricity. Here our extensive first-principles calculations reveal that in-plane interlayer sliding of Janus MXY (M = Mo or W, X/Y = S, Se, or Te, and X ≠ Y) bilayers would lead to significant enhancement of vertical piezoelectricity. The tribo-piezoelectric transduction mechanism is elucidated by tribological energy conversion of Janus TMD bilayers overcoming interlayer sliding resistance to reach the A-A stacking states that have the strongest out-of-plane piezoelectricity. Reducing interlayer distances of Janus TMD bilayers increases sliding energy barriers, and accordingly improves vertical charge polarization and inductive voltage generated between the top and bottom surfaces of Janus TMD bilayers. Based on the presented tribo-piezoelectricity, a compression-sliding design strategy is proposed for Janus TMD bilayers to create novel nanogenerators.
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