发光二极管
材料科学
RGB颜色模型
光电子学
二极管
量子点
计算机科学
人工智能
作者
Sung‐Wen Huang Chen,Yu-Ming Huang,Konthoujam James Singh,Yao Jane Hsu,Fang-Jyun Liou,Jie Song,Joowon Choi,Po-Tsung Lee,Chien-Chung Lin,Cheng Zhong,Jung Han,Tingzhu Wu,Hao−Chung Kuo
出处
期刊:Photonics Research
[The Optical Society]
日期:2020-04-15
卷期号:8 (5): 630-630
被引量:104
摘要
Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A / cm 2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).
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