退火(玻璃)
铟
材料科学
镓
锌
薄膜
分析化学(期刊)
溅射
电极
微晶
分压
氧气
氧化物
光电子学
化学
冶金
纳米技术
色谱法
有机化学
物理化学
作者
E. Sunil Babu,Hyun-Jin Shin,Nguyen Kim Thah,Ki-Woo Song,Hyun-Woong Choi,Seong-Hyun Kim,Hi-Doek Lee
标识
DOI:10.1016/j.snb.2021.131082
摘要
Indium–gallium–zinc oxide (IGZO) thin films were prepared in a N2 environment by varying the annealing pressure and then tested for NO2 gas detection. These thin films, whose average thickness ranged between 5 and 100 nm, were deposited via the sputtering on alumina substrates equipped with interdigitated Au electrodes using an IGZO polycrystalline target (ZnO: Ga2O3:In2O3 = 1:1:1 mol%). The effects of annealing pressure and environment were investigated. A superior sensor response (S) was observed when increasing the annealing pressure; the prepared IGZO thin film showed an S of –800 at an operating temperature of 250 °C for 25 ppm NO2 gas. The recovery time decreased with increasing the annealing temperature. The sensor annealed at 400 °C at 3 atm showed superior selectivity to various gases and longtime stability of 60 days was attained. The role of the oxygen vacancies in the sensor performance was also investigated.
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