互连
电源完整性
三维集成电路
设计技术
技术路线图
集成电路设计
节点(物理)
模具(集成电路)
关键路径法
计算机科学
布线(电子设计自动化)
电路设计
偏移量(计算机科学)
炸薯条
信号完整性
工程类
嵌入式系统
系统工程
电信
机械工程
营销
业务
程序设计语言
结构工程
作者
Heechun Park,Kyungjoon Chang,Jooyeon Jeong,Jaehoon Ahn,Ki-Seok Chung,Taewhan Kim
标识
DOI:10.1109/isocc53507.2021.9614026
摘要
Design-technology-co-optimization (DTCO) is essential in deep submicron technologies (e.g., 14nm and below) to co-optimize process technology and design rules and obtain more benefit from advanced node. As the process technology shrinks to deep submicron, the importance of back-end-of-line (BEOL) interconnect in a full chip design drastically grows since its less-than-micron width brings unexpected critical design rules that requires novel design techniques. In this paper, we provide a comprehensive survey on recent challenging issues and cutting-edge design methodologies for DTCO in deep submicron interconnect technology, which includes: offset assignment for pin accessibility; monolithic 3D integration; middle-of-line (MOL) utilization for routing; BEOL-aware representative critical path circuit synthesis; and buried power rail (BPR).
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